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LL4150
Vishay Semiconductors
Small Signal Fast Switching Diode
Features
* * * * * Silicon Epitaxial Planar Diodes Low forward voltage drop e2 High forward current capability Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
94 9371
Applications
* High speed switch and general purpose use in computer and industrial applications
Mechanical Data
Case: MiniMELF Glass case (SOD80) Weight: approx. 31 mg Cathode Band Color: Black Packaging Codes/Options: GS18/10 k per 13" reel (8 mm tape), 10 k/box GS08/2.5 k per 7" reel (8 mm tape), 12.5 k/box
Parts Table
Part LL4150 Ordering code LL4150-GS18 or LL4150-GS08 Type Marking Remarks Tape and Reel
Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Forward continuous current Average forward current Power dissipation VR = 0 tp = 1 s Test condition Symbol VRRM VR IFSM IF IFAV PV Value 50 50 4 600 300 500 Unit V V A mA mA mW
Thermal Characteristics
Tamb = 25 C, unless otherwise specified Parameter Test condition Symbol RthJA Tj Tstg Value 500 175 - 65 to + 175 Unit K/W C C Thermal resistance junction to ambient air on PC board 50 mm x 50 mm x 1.6 mm Junction temperature Storage temperature range
Document Number 85558 Rev. 1.7, 30-Aug-06
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LL4150
Vishay Semiconductors Electrical Characteristics
Tamb = 25 C, unless otherwise specified Parameter Forward voltage Test condition IF = 1 mA IF = 10 mA IF = 50 mA IF= 100 mA IF = 200 mA Reverse current Diode capacitance Reverse recovery time VR = 50 V VR = 50 V, Tj = 150 C VR = 0, f = 1 MHz, VHF = 50 mV IF = IR = 10 to 100 mA, iR = 0.1 x IR, RL = 100 Symbol VF VF VF VF VF IR IR CD trr Min 540 660 760 820 870 Typ. Max 620 740 860 920 1000 100 100 2.5 4 Unit mV mV mV mV mV nA A pF ns
Typical Characteristics
Tamb = 25 C, unless otherwise specified
100
I R - Reverse Current (A)
Scattering Limit 10
1
0.1 VR = 50 V 0 40 80 120 160 200
0.01
94 9100
Tj - Junction Temperature (C)
Figure 1. Reverse Current vs. Junction Temperature
1000
I F - Forward Current (mA)
100 Scattering Limit 10
1 Tj = 25 C 0 0.4 0.8 1.2 1.6 2.0
0.1
94 9162
V F - Forward Voltage (V)
Figure 2. Forward Current vs. Forward Voltage
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Document Number 85558 Rev. 1.7, 30-Aug-06
LL4150
Vishay Semiconductors Package Dimensions in mm (Inches): SOD80
96 12070
Document Number 85558 Rev. 1.7, 30-Aug-06
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LL4150
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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Document Number 85558 Rev. 1.7, 30-Aug-06
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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